The Physics & Astronomy Colloquium Series presents Jay Mathews of University of Dayton, on”Hyperdoping Silicon for Infrared Optoelectronics”, on Friday, Nov. 1, at 4:10 p.m. in Clippinger Labs 194.
Jay Mathews
Abstract: Silicon is the basis for a multi-billion dollar industry, but its optical properties have limited its use in optoelectronics for infrared (IR) applications. Many IR devices are currently made using III-V or II-VI materials, which has served to fill the gap, but these materials tend to be expensive, and integrating the materials and devices into Si fabrication can be difficult. Recent advances in the field of laser hyperdoping have produced a new class of materials that could lead the way to silicon-based, CMOS-compatible infrared detectors. Using the method of ion implantation followed by pulsed laser melting (II-PLM), silicon films with impurities at concentrations well above the solid solubility limit (hyperdoped) can be fabricated. Recent work has centered around Si:Au, from which prototype IR detectors with response at wavelengths up to 2 microns have been successfully achieved.
I will discuss the fabrication of these new materials, their optical and structural properties, and our recent work on photodetector development.
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