The Condensed Matter & Surface Sciences Colloquium Series presents Andrew J. Green of Wright-Patterson Air Force Base on “Wide Band Gap Semiconductors for Radio Frequency and Power Switch Operation” on Thursday, March 30, at 4:10 p.m. in Walter 245.
Abstract: Wide band gap (>3 eV) semiconductors have significant advantages over Si and GaAs such as high breakdown strength, high speed operation, and high temperature operation. I will discuss my research in three different material technology nodes including GaN, ZnO, and Ga2O3. GaN, while a very mature device technology, still has rampant prototyping/research opportunities for transmit/receive circuits. ZnO and other MOTFTs have experienced significant attention by the display industry over the last decade, but our group has taken a tangential approach. We are evaluating the material for its strong raw performance and substrate agnosticism. Finally, we will look at Ga2O3. It is the newest Ultra-Wide Band Gap Semiconductor to hit the field. Its band gap of ~5 eV boasts a massive breakdown strength of 8 MV/cm having strong ramifications for the power electronics market.
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